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• W4379467011 abstract "The BST/Si photodiode has been effectively synthesized by growth BST on the p-type Si (100) substrate utilizing the hydrothermal process. Screen printing was used to prepare TiO 2 film deposited on Si substrate, then immersing TiO 2 film in Ba(OH) 2 and Sr(OH) 2 solution to fabricate BST/Si photodiode using a hydrothermal process. The BST film was studied using XRD, FESEM, and reflection spectra. The band gap was calculated for a BT film using the reflection methods. Hall measurement confirmed the n-type conductivity of BST film. Curie temperature of the BST film was observed at 87 °C according to DC measurement. The dark and illuminated (J-V) characteristics of the BST/Si photodiode have been measured under simulated AM1 conditions using a Xenon lamp. The Shockley-Read- Hall recombination caused unequal electron and hole capture rates that dominated the I-V characteristics resulting in an absence of classic superposition phenomena. The open circuit voltage (V oc ) measurement is carried out to know the recombination mechanism in an open circuit. The BST/Si film showed more conductivity after increasing illuminating power density, which qualifies it for photovoltaic applications." @default.
• W4379467011 created "2023-06-07" @default.
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• W4379467011 date "2023-06-01" @default.
• W4379467011 modified "2023-09-27" @default.
• W4379467011 title "Photovoltaic Response of Heterojunction Photodiode based on Ba_0.8Sr_0.2TiO₃ Nanorod Film" @default.
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• W4379467011 doi "https://doi.org/10.1149/2162-8777/acdb99" @default.
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