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- W4379526972 abstract "Unlike JFET, where the gate was coupled to the channel via p–n junction, the other category of field-effect transistors has an insulated gate. Silicon oxide (SiO2) is used as insulation. Hence the name IGFETIGFET (insulated gate field-effect transistor)Insulated Gate Field-Effect Transistor. It is easy to conclude that the gate current of such a component is even lower than in a JFET, which is a great advantage of this category of transistors. Since IGFETIGFET can be made of very small dimensions and since such components are easily isolated in integrated circuits, they became by far the dominant component in modern digital electronics. They are also very widely used as parts of analog circuits and, recently, they are frequently implemented as discrete power components. In these transistors, the gate was first made of metal (aluminium) so that a sandwich is formed: metal–oxide–semiconductor. This is how the alternate name of these components came. MOSFET from metal–oxide–semiconductor FET. Recently, highly doped polysilicon or silicon compounds (silicides) have been used to make gates. The name MOS transistor has remained independent of advances in technology." @default.
- W4379526972 created "2023-06-07" @default.
- W4379526972 creator A5058461236 @default.
- W4379526972 date "2023-01-01" @default.
- W4379526972 modified "2023-10-08" @default.
- W4379526972 title "1.6 Insulated Gate Field-Effect Transistors—IGFET" @default.
- W4379526972 doi "https://doi.org/10.1007/978-981-19-9868-3_6" @default.
- W4379526972 hasPublicationYear "2023" @default.
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