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• W4379615908 abstract "Abstract This paper presents a 0.5 mm × 0.5 mm tiny-sized high-temperature piezoresistive pressure sensor fabricated with a thin-film under bulk single-sided micromachining process from the front-side of single-layer (111) silicon on insulator (SOI) wafer. The (111)-device layer of the SOI wafer is specifically selected to optimize the piezoresistor performance where the SiO 2 buried layer isolates the piezoresistors from the handle substrate. And the (111)-handle layer is employed to subtly construct a single-crystalline-silicon beam-island combining with a very thin but uniform poly-silicon diaphragm for realization of both low nonlinearity and high sensitivity. Without double-sided micromachining process and wafer bonding used, a tiny sensor-chip size of 0.5 mm × 0.5 mm is achieved, which is required in wind-tunnel systems for measuring pressure distribution at high temperature. The testing results of the fabricated sensor show high sensitivity of 0.15 mV V −1 kPa −1 for 150 kPa measure range and satisfactory linearity of ±0.11% FS (full scale) at ambient temperature. At 350 °C, the overall accuracy is 0.17% FS and the thermal hysteresis is 0.22% FS. The temperature coefficient of zero-point offset of the sensor is tested as low as 0.01% °C −1 FS and the temperature coefficient of sensitivity is −0.07% °C −1 FS within the whole temperature range from −55 °C to 350 °C. Featuring the advantages of high accuracy and high-yield low-cost fabrication, the tiny-sized high-temperature pressure sensors exhibit promising perspectives in the field of aerospace industry including wind-tunnel applications." @default.
• W4379615908 created "2023-06-08" @default.
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• W4379615908 date "2023-06-21" @default.
• W4379615908 modified "2023-10-18" @default.
• W4379615908 title "Ultra-small high‐temperature pressure sensor chips fabricated in single‐layer (111) SOI wafers" @default.
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• W4379615908 doi "https://doi.org/10.1088/1361-6439/acdc35" @default.
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