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• W4379616602 abstract "Abstract We have fabricated Sb 70 Se 30 /HfO 2 superlattice-like structure thin films for phase change memory by magnetron sputtering method, and investigated the effect of the HfO 2 layer on the crystalline characteristics and phase change behavior of Sb 70 Se 30 /HfO 2 thin films. The experimental results show that as the HfO 2 thickness increases, the crystallization temperature rises, the data retention capacity increases as well as the band gap widens, which is beneficial for improving the thermal stability and reliability of Sb 70 Se 30 /HfO 2 thin films. It was also found that the HfO 2 composite layer inhibited the grain growth of the Sb 70 Se 30 thin film, reducing the grain size and resulting in a smoother surface. In addition, the volume fluctuation of the Sb 70 Se 30 /HfO 2 thin films changes by only 5.58% between amorphous and crystalline. The threshold and reset voltages of the cell based on Sb 70 Se 30 /HfO 2 thin films are 1.52 V and 2.4 V respectively. We found that the HfO 2 composite layer plays a significant role in improving thermal stability, refining grain size of Sb 70 Se 30 phase change films and reducing device power consumption." @default.
• W4379616602 created "2023-06-08" @default.
• W4379616602 creator A5070602796 @default.
• W4379616602 creator A5084749619 @default.
• W4379616602 date "2023-06-23" @default.
• W4379616602 modified "2023-09-23" @default.
• W4379616602 title "Superlattice-like Sb₇₀Se₃₀/HfO₂ thin films for high thermal stability and low power consumption phase change memory" @default.
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• W4379616602 doi "https://doi.org/10.1088/1361-6528/acdc2e" @default.
• W4379616602 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/37285830" @default.
• W4379616602 hasPublicationYear "2023" @default.
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