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- W4380053051 abstract "In this study, we examine the effect of interface trap states on the electrical characteristics of single-gated feedback field-effect transistors (FBFETs) using a commercially available computer-aided design simulation package. Interface trap states exist between the channels and the oxide layers, and these trap states act as acceptor-like trap states in regions of higher energy than the intrinsic Fermi energy ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$E_{mathrm {i}}$ </tex-math></inline-formula> ) and as donor-like trap states in regions of lower energy than <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$E_{mathrm {i}}$ </tex-math></inline-formula> in the energy band. The density distribution peaks at <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$E_{mathrm {i}}$ </tex-math></inline-formula> + 0.28 eV for the acceptor-like trap states and at <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$E_{mathrm {i}}$ </tex-math></inline-formula> – 0.28 eV for the donor-like trap states. The occupation mechanism of these trap states is analyzed by the density of the interface states and trapped charges, the energy band diagram, and the current-voltage curves. In n-channel (p-channel) FBFETs, the latch-up voltage varies by approximately 0.01 V as the acceptor-like (donor-like) trap states increase, whereas the effect of the donor-like (acceptor-like) trap states is negligible. Moreover, the FBFETs exhibit an operating speed of 4 ns and retention time of 900 s during a memory operation, despite the existence of the interface states." @default.
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- W4380053051 date "2023-01-01" @default.
- W4380053051 modified "2023-10-15" @default.
- W4380053051 title "Effects of Interface States on Electrical Characteristics of Feedback Field-Effect Transistors" @default.
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- W4380053051 doi "https://doi.org/10.1109/access.2023.3281358" @default.
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