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• W4380302893 abstract "HfZrO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><i>x</i></sub> -based Si n-/p-type ferroelectric field-effect transistors (n/pFEFETs) were investigated from 300 to 82 K with pulse measurements, which disclosed device physics at low temperatures. Moreover, FEFET shows extremely improved performance (read-after-write latency < 100 ns and write endurance <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$10^{{10}}$ </tex-math></inline-formula> cycles with no device degradation) at 82 K. Even the lower write voltage is feasible at 82 K than at 300 K although the coercive field increases. The enhancement is attributed to frozen trap sites and increased coercive field at 82 K. Our work not only shows a deep understanding of device physics but also proposes that FEFET could be a promising cold memory." @default.
• W4380302893 created "2023-06-13" @default.
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• W4380302893 date "2023-08-01" @default.
• W4380302893 modified "2023-10-16" @default.
• W4380302893 title "Examination of Ferroelectric FET for “Cold” Nonvolatile Memory" @default.
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• W4380302893 doi "https://doi.org/10.1109/ted.2023.3278611" @default.
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