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• W4380355232 abstract "To increase the bankability of photovoltaics (PV), a more accurate prediction of the lifetime and degradation-rate of PV modules is required. In past studies, average degradation rates for different technologies have been derived from field data. However, in Cu(In,Ga)Se2 (CIGS) based PV, localized shunts are commonly found in modules coming out of the factory. Although the impact of such localized defects on initial module performance has been studied in the past, their evolution and impact on module performance upon aging remain mostly unknown. In this paper, it is demonstrated that exposure of CIGS devices to elevated temperatures and humidity can result in the partial or complete recovery of localized ohmic shunts. This was observed for three types of shunting defects, each on a different CIGS device characterized before and after damp heat exposure. In each device, the reduction in shunting after damp heat could be observed in illuminated lock-in thermography, photoluminescence and current-voltage measurements. For two of the devices, the positive effect of shunt reduction was counteracted by other degradation mechanisms, such as increase in series resistance of TCO or back contact, while a 4% absolute efficiency increase was observed in the third device. Our data suggests that the shunting is mainly reduced due to oxidation of the materials initially forming the shunting path. The combined effects of moisture degradation and shunt reduction may limit detectability of moisture ingress in electrical performance data. These results illustrate the added value of regular visual inspection and luminescence in quality control." @default.
• W4380355232 created "2023-06-13" @default.
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• W4380355232 date "2023-08-01" @default.
• W4380355232 modified "2023-09-25" @default.
• W4380355232 title "Changes in ohmic shunts in Cu(In,Ga)Se2 devices during damp heat" @default.
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• W4380355232 doi "https://doi.org/10.1016/j.solmat.2023.112403" @default.
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