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• W4380450864 abstract "In this report, we consider the effect of radiation with radiation energy below the <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$beta $ </tex-math></inline-formula> -Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> band-gap on the photoelectric characteristics of ultraviolet (UV) radiation detectors based on gallium oxide thin films. The gallium oxide film was deposited by radio frequency magnetron sputtering. Interdigital Ti/V electrodes were formed with an inter-electrode distance <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${d}$ </tex-math></inline-formula> = <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$30 mu text{m}$ </tex-math></inline-formula> . The structures exhibit high values of photocurrent under irradiation with a wavelength of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$lambda $ </tex-math></inline-formula> = 254 nm and intensity of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$780 mu text{W}$ </tex-math></inline-formula> /cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> . The detectors exhibit persistent photoconductivity after exposure to UV radiation. The presence of persistent conductivity is explained by the high concentration of traps in the Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> film and their recharging under UV irradiation. Radiation with an energy quantum below the <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$beta $ </tex-math></inline-formula> -Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> band-gap changes the charge state of trap centers in a gallium oxide film. This effect leads to an increase in photocurrent under UV exposure and increases the stability of detectors." @default.
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• W4380450864 date "2023-07-15" @default.
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• W4380450864 title "Influence of White Light on the Photoelectric Characteristics of UV Detectors Based on β-Ga₂O₃" @default.
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