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- W4380478852 abstract "We report on a multi-year development effort demonstrating resonant cavity enhanced photodiodes (RCE-PDs) with an all-epitaxial architecture, exploiting the GaSb matched material system and its increasingly popular family of IR absorbers. RCE-PDs redefine the relationship between signal and noise generation within IR detectors, breaking some of the performance limits constraining conventional IR detectors. High performance RCE-PDs are achieved with resonance wavelengths from the SWIR to the LWIR, using GaSb/AlAsSb DBR mirrors and InGaAsSb, InAs, InAsSb and T2SL absorbers. Finally, we introduce a graded thickness RCE-PD which can perform the function of a spectrometer on a chip." @default.
- W4380478852 created "2023-06-14" @default.
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- W4380478852 date "2023-06-15" @default.
- W4380478852 modified "2023-09-23" @default.
- W4380478852 title "Resonant cavity enhanced infrared photodiodes" @default.
- W4380478852 doi "https://doi.org/10.1117/12.2664355" @default.
- W4380478852 hasPublicationYear "2023" @default.
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