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• W4380551582 abstract "Planer-type HEMTs using fully depleted AlGaN/GaN epitaxial layers called EID (Extrinsically electron Induced by Dielectric) AlGaN/GaN MOS-HEMTs are expected to be stable and reliable E-mode operation thanks to its damage-less fabrication process. Fundamental characteristics of the EID-HEMTs for power switching applications were investigated in this study. The fabricated EID-HEMTs exhibited E-mode operation with threshold voltage of 0.5 V, on-resistance of <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$210 mathrm{m}Omega$</tex> and break-down voltage of 1.1 kV. Furthermore, clear 400 V/10 A switching operation without any harmful symptoms was also demonstrated." @default.
• W4380551582 created "2023-06-14" @default.
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• W4380551582 date "2023-05-28" @default.
• W4380551582 modified "2023-09-26" @default.
• W4380551582 title "Demonstration of Fundamental Characteristics for Power Switching Application in Planer Type E-mode MOS-HEMT Using Normally Depleted AlGaN GaN Epitaxial Layer On Si Substrate" @default.
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• W4380551582 doi "https://doi.org/10.1109/ispsd57135.2023.10147503" @default.
• W4380551582 hasPublicationYear "2023" @default.
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