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- W4380605514 abstract "In the paper degradation effects such as the self-heating effect and DIBL effect in 2D MoS2 based MOSFET is investigated by simulations. It is considered transistors with Al <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> and HfO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> as gate oxide and SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> and HfO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> as back oxide (BOX). The self-heating effect (SHE) is simulated by using the thermodynamic transport model. Dependence of DIBL(drain induced barrier lowering) effect and lattice temperature in the channel center on the gate length for transistors with different gate oxide and BOX materials is considered. Transistors with channel fully covered and partly covered (only under the gate) by gate oxide is considered. It is shown that the transistors with Al <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> as gate oxide and SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> as BOX materials has higher immunity against the DIBL effect and transistors with HfO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> as gate oxide and HfO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> as BOX materials has higher immunity against the SHE." @default.
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- W4380605514 date "2022-09-28" @default.
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- W4380605514 title "Self heating and DIBL effects in 2D MoS2 based MOSFET with different gate oxide and back oxide materials" @default.
- W4380605514 cites W2138421559 @default.
- W4380605514 doi "https://doi.org/10.1109/icisct55600.2022.10146786" @default.
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