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- W4380764994 endingPage "112310" @default.
- W4380764994 startingPage "112310" @default.
- W4380764994 abstract "The GaAs nanowire (NW) morphology transformation during a high temperature annealing of densely packed wires was analyzed by Monte Carlo simulation. For long densely spaced NWs, the arsenic evaporation with its removal from the system occurs only in the upper NW part at such distance that As2 molecules can overcome due to the channeling between adjacent NWs before reaching vacuum. In the lower NW part, two oppositely directed processes proceed: destruction and restoration of the NW side wall due to the readsorbed material. Thus, the lower part of wire evaporation is close to a quasi-equilibrium process, and the upper part is close to free evaporation into vacuum. An excess of gallium primarily occurs at the top part of the crystal, since it is in the conditions close to a free arsenic evaporation. An excess gallium gathering leads to the Ga droplet formation. Droplets in the middle part of the NW side walls are formed later. A droplet-free region is formed on the sidewall of sufficiently long NWs with a length>345 nm and the distance of 28 nm between the wires after the annealing at T = 890 K. That means that the congruent evaporation temperature varies along the NW axis due to the variation of arsenic pressure, resulting in the congruent evaporation from the lower NW region and incongruent evaporation from the upper wire region. Simulation results predict the dendrite (thin nanowire branching off original wires) growth during a prolonged annealing under incongruent conditions." @default.
- W4380764994 created "2023-06-16" @default.
- W4380764994 creator A5009259360 @default.
- W4380764994 creator A5013112324 @default.
- W4380764994 creator A5033442738 @default.
- W4380764994 date "2023-09-01" @default.
- W4380764994 modified "2023-09-27" @default.
- W4380764994 title "Simulation of GaAs nanowire annealing" @default.
- W4380764994 cites W1966675466 @default.
- W4380764994 cites W1982396868 @default.
- W4380764994 cites W1984506457 @default.
- W4380764994 cites W1986908964 @default.
- W4380764994 cites W1987341004 @default.
- W4380764994 cites W1987695989 @default.
- W4380764994 cites W2023579904 @default.
- W4380764994 cites W2075267479 @default.
- W4380764994 cites W2081450305 @default.
- W4380764994 cites W2124197320 @default.
- W4380764994 cites W2329623030 @default.
- W4380764994 cites W2520753527 @default.
- W4380764994 cites W2889395351 @default.
- W4380764994 cites W2947912685 @default.
- W4380764994 cites W2965894632 @default.
- W4380764994 cites W3026579343 @default.
- W4380764994 cites W3089110871 @default.
- W4380764994 cites W3095458011 @default.
- W4380764994 cites W3104870162 @default.
- W4380764994 cites W3185291472 @default.
- W4380764994 doi "https://doi.org/10.1016/j.commatsci.2023.112310" @default.
- W4380764994 hasPublicationYear "2023" @default.
- W4380764994 type Work @default.
- W4380764994 citedByCount "0" @default.
- W4380764994 crossrefType "journal-article" @default.
- W4380764994 hasAuthorship W4380764994A5009259360 @default.
- W4380764994 hasAuthorship W4380764994A5013112324 @default.
- W4380764994 hasAuthorship W4380764994A5033442738 @default.
- W4380764994 hasConcept C121332964 @default.
- W4380764994 hasConcept C159467904 @default.
- W4380764994 hasConcept C159985019 @default.
- W4380764994 hasConcept C171250308 @default.
- W4380764994 hasConcept C185592680 @default.
- W4380764994 hasConcept C19067145 @default.
- W4380764994 hasConcept C191897082 @default.
- W4380764994 hasConcept C192562407 @default.
- W4380764994 hasConcept C26873012 @default.
- W4380764994 hasConcept C2777855556 @default.
- W4380764994 hasConcept C2779192298 @default.
- W4380764994 hasConcept C502230775 @default.
- W4380764994 hasConcept C550372918 @default.
- W4380764994 hasConcept C61441594 @default.
- W4380764994 hasConcept C74214498 @default.
- W4380764994 hasConcept C97355855 @default.
- W4380764994 hasConceptScore W4380764994C121332964 @default.
- W4380764994 hasConceptScore W4380764994C159467904 @default.
- W4380764994 hasConceptScore W4380764994C159985019 @default.
- W4380764994 hasConceptScore W4380764994C171250308 @default.
- W4380764994 hasConceptScore W4380764994C185592680 @default.
- W4380764994 hasConceptScore W4380764994C19067145 @default.
- W4380764994 hasConceptScore W4380764994C191897082 @default.
- W4380764994 hasConceptScore W4380764994C192562407 @default.
- W4380764994 hasConceptScore W4380764994C26873012 @default.
- W4380764994 hasConceptScore W4380764994C2777855556 @default.
- W4380764994 hasConceptScore W4380764994C2779192298 @default.
- W4380764994 hasConceptScore W4380764994C502230775 @default.
- W4380764994 hasConceptScore W4380764994C550372918 @default.
- W4380764994 hasConceptScore W4380764994C61441594 @default.
- W4380764994 hasConceptScore W4380764994C74214498 @default.
- W4380764994 hasConceptScore W4380764994C97355855 @default.
- W4380764994 hasLocation W43807649941 @default.
- W4380764994 hasOpenAccess W4380764994 @default.
- W4380764994 hasPrimaryLocation W43807649941 @default.
- W4380764994 hasRelatedWork W2055171879 @default.
- W4380764994 hasRelatedWork W2064285767 @default.
- W4380764994 hasRelatedWork W2356528966 @default.
- W4380764994 hasRelatedWork W2368639694 @default.
- W4380764994 hasRelatedWork W2738025024 @default.
- W4380764994 hasRelatedWork W2801536791 @default.
- W4380764994 hasRelatedWork W3013507434 @default.
- W4380764994 hasRelatedWork W3131067079 @default.
- W4380764994 hasRelatedWork W322720305 @default.
- W4380764994 hasRelatedWork W833304027 @default.
- W4380764994 hasVolume "228" @default.
- W4380764994 isParatext "false" @default.
- W4380764994 isRetracted "false" @default.
- W4380764994 workType "article" @default.