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• W4380785613 abstract "A novel 4H-SiC junction barrier Schottky (JBS) with deep linear graded doping (DLGD) P junction structure is proposed and fabricated to enhance the radiation tolerance of Single-Event Effect (SEE). The radiation-hardened function of the proposed new structure is confirmed via two-dimensional numerical simulation and SEE experiment. The hardened device was tested under heavy ion irradiation with linear energy transfer (LET) up to 83.5 MeV <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$cdot $ </tex-math></inline-formula> cm2/mg. Test results show that the single-event leakage current (SELC) threshold voltage of the hardened device is 400 V, which is the best SEE radiation-hardened performance reported so far for high-voltage 4H-SiC JBS. Compared with the state-of-the-art counterparts, this work is about 2 times improvement in SELC threshold voltage." @default.
• W4380785613 created "2023-06-16" @default.
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• W4380785613 date "2023-08-01" @default.
• W4380785613 modified "2023-10-06" @default.
• W4380785613 title "Development of 400 V-Tolerant Single-Event Effect Hardened 4H-SiC Schottky Diode With Linear Energy Transfer Upto 83.5 MeV⋅cm²/mg" @default.
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• W4380785613 doi "https://doi.org/10.1109/led.2023.3286609" @default.
• W4380785613 hasPublicationYear "2023" @default.
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