Matches in SemOpenAlex for { <https://semopenalex.org/work/W4380883755> ?p ?o ?g. }
- W4380883755 endingPage "103081" @default.
- W4380883755 startingPage "103081" @default.
- W4380883755 abstract "Thermally evaporated Se/In bilayer films were irradiated by 120 MeV Ag ion at different fluences. Energy-dispersive X-ray fluorescence (EDXRF) spectra of the films showed the 1:2 ratio concentration of In and Se. After six months of preserving the films under ambient condition, four phases: In2Se3, In4Se3, In and Se developed in the films as revealed by Grazing incidence X-ray diffraction (GIXRD) study. The In4Se3 and In were completely insensitive to the irradiation while the other two phases (In2Se3 and Se) were completely amorphized at high ion fluences. The Poission fitting of the fluence dependence area under X-ray diffraction (XRD) peaks showed the radius of amorphized latent tracks along the path of 120 MeV Ag ions in In2Se3 and Se as 8.4 nm and 9.5 nm respectively. The lattice fringe images of High-resolution transmission electron microscopy (HRTEM) showed the presence of the four phases as observed by GIXRD study. The UV-visible study revealed the band gap reduction at the low fluence region from pristine to 3 × 1011ions cm−2 and increased at high fluence from 1 × 1012 ions cm-2 to 1 × 1013 ions cm-2. This variation of band gap may be due to the formation of localized states and annealing effect due to ion irradiation. Field emission scanning electron microscopy (FESEM) images showed the nano needle shaped structure formation at 1 × 1012 ions cm−2 which increased with ion fluences. The appearance of needle shaped structures may be due to the In2Se3 phase. The I-V study showed the excellent current response in mA range which enables the films for various electrical applications. The surface wettability study showed the hydrophobicity nature of the films which enables it for application in different coating materials." @default.
- W4380883755 created "2023-06-17" @default.
- W4380883755 creator A5018562837 @default.
- W4380883755 creator A5029483875 @default.
- W4380883755 creator A5056332650 @default.
- W4380883755 creator A5068020315 @default.
- W4380883755 creator A5070841619 @default.
- W4380883755 creator A5079469389 @default.
- W4380883755 creator A5089229193 @default.
- W4380883755 date "2023-08-01" @default.
- W4380883755 modified "2023-09-27" @default.
- W4380883755 title "Interface engineered nanostructured phase formation at Se/In sites by Ag ion irradiation and its structural, optical and morphological behavior" @default.
- W4380883755 cites W1614331016 @default.
- W4380883755 cites W1935138538 @default.
- W4380883755 cites W1965321251 @default.
- W4380883755 cites W1971573026 @default.
- W4380883755 cites W1984651354 @default.
- W4380883755 cites W1990898269 @default.
- W4380883755 cites W1993037698 @default.
- W4380883755 cites W1993853269 @default.
- W4380883755 cites W1994041629 @default.
- W4380883755 cites W1996665746 @default.
- W4380883755 cites W2004100916 @default.
- W4380883755 cites W2005388612 @default.
- W4380883755 cites W2007146723 @default.
- W4380883755 cites W2007937527 @default.
- W4380883755 cites W2008845749 @default.
- W4380883755 cites W2027308333 @default.
- W4380883755 cites W2032471316 @default.
- W4380883755 cites W2045802354 @default.
- W4380883755 cites W2053869581 @default.
- W4380883755 cites W2059249541 @default.
- W4380883755 cites W2059728942 @default.
- W4380883755 cites W2060929287 @default.
- W4380883755 cites W2063695162 @default.
- W4380883755 cites W2069776887 @default.
- W4380883755 cites W2075278918 @default.
- W4380883755 cites W2084916907 @default.
- W4380883755 cites W2086337839 @default.
- W4380883755 cites W2091345076 @default.
- W4380883755 cites W2094859645 @default.
- W4380883755 cites W2555461040 @default.
- W4380883755 cites W2561426011 @default.
- W4380883755 cites W2790855837 @default.
- W4380883755 cites W2914931279 @default.
- W4380883755 cites W2962416731 @default.
- W4380883755 cites W2962567573 @default.
- W4380883755 cites W2997444424 @default.
- W4380883755 cites W2998981123 @default.
- W4380883755 cites W2999803053 @default.
- W4380883755 cites W3034043298 @default.
- W4380883755 cites W3080418926 @default.
- W4380883755 cites W3087171231 @default.
- W4380883755 cites W3099152385 @default.
- W4380883755 cites W3101017211 @default.
- W4380883755 cites W3169520378 @default.
- W4380883755 cites W3191556458 @default.
- W4380883755 cites W4200319846 @default.
- W4380883755 cites W4205379285 @default.
- W4380883755 cites W4220819704 @default.
- W4380883755 cites W4220885884 @default.
- W4380883755 cites W4225395615 @default.
- W4380883755 cites W4281791876 @default.
- W4380883755 cites W4302278313 @default.
- W4380883755 cites W4306711595 @default.
- W4380883755 cites W4312045801 @default.
- W4380883755 cites W4320498345 @default.
- W4380883755 cites W4376106836 @default.
- W4380883755 doi "https://doi.org/10.1016/j.surfin.2023.103081" @default.
- W4380883755 hasPublicationYear "2023" @default.
- W4380883755 type Work @default.
- W4380883755 citedByCount "0" @default.
- W4380883755 crossrefType "journal-article" @default.
- W4380883755 hasAuthorship W4380883755A5018562837 @default.
- W4380883755 hasAuthorship W4380883755A5029483875 @default.
- W4380883755 hasAuthorship W4380883755A5056332650 @default.
- W4380883755 hasAuthorship W4380883755A5068020315 @default.
- W4380883755 hasAuthorship W4380883755A5070841619 @default.
- W4380883755 hasAuthorship W4380883755A5079469389 @default.
- W4380883755 hasAuthorship W4380883755A5089229193 @default.
- W4380883755 hasConcept C111337013 @default.
- W4380883755 hasConcept C113196181 @default.
- W4380883755 hasConcept C121332964 @default.
- W4380883755 hasConcept C145148216 @default.
- W4380883755 hasConcept C146088050 @default.
- W4380883755 hasConcept C159985019 @default.
- W4380883755 hasConcept C161368742 @default.
- W4380883755 hasConcept C171250308 @default.
- W4380883755 hasConcept C178790620 @default.
- W4380883755 hasConcept C181966813 @default.
- W4380883755 hasConcept C185544564 @default.
- W4380883755 hasConcept C185592680 @default.
- W4380883755 hasConcept C192562407 @default.
- W4380883755 hasConcept C22078206 @default.
- W4380883755 hasConcept C2777855556 @default.
- W4380883755 hasConcept C43617362 @default.
- W4380883755 hasConcept C49040817 @default.
- W4380883755 hasConceptScore W4380883755C111337013 @default.