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- W4381058462 abstract "In this paper a mathematical model of polarization switching in a ferroelectric capacitor has been developed. This model reflects adequately processes of writing and reading in elements of the FRAM-memory and may be utilized in an automated design of ferroelectric storage elements and devices. The object of research is processes of polarization switching in ferroelectric films of nanosized storage elements. The purpose of the study is to develop a mathematical model of electrical polarization switching for thin-film ferrocapacitors. A research method is applied theoretical analysis and mathematical modeling." @default.
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- W4381058462 date "2023-01-01" @default.
- W4381058462 modified "2023-09-26" @default.
- W4381058462 title "Mathematical Model of Electric Polarization Switching in a Ferroelectric Capacitor for Ferroelectric RAM" @default.
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- W4381058462 doi "https://doi.org/10.1007/978-3-031-35467-0_44" @default.
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