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• W4381597841 abstract "The extraordinary mechanical properties of two-dimensional transition-metal dichalcogenides make them ideal candidates for investigating strain-induced control of various physical properties. Here we explore the role of nonuniform strain in modulating optical, electronic, and transport properties of semiconducting, chemical vapor deposited monolayer MoS2, on periodically nanostructured substrates. A combination of spatially resolved spectroscopic and electronic properties explore and quantify the differential strain distribution and carrier density on a monolayer, as it conformally drapes over the periodic nanostructures. The observed accumulation in electron density at the strained regions is supported by theoretical calculations which form the likely basis for the ensuing ×60 increase in field effect mobility in strained samples. Though spatially nonuniform, the pattern-induced strain is shown to be readily controlled by changing the periodicity of the nanostructures thus providing a robust yet useful macroscopic control on strain and mobility in these systems." @default.
• W4381597841 created "2023-06-23" @default.
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• W4381597841 date "2023-06-22" @default.
• W4381597841 modified "2023-09-27" @default.
• W4381597841 title "Mobility Enhancement in CVD-Grown Monolayer MoS₂ Via Patterned Substrate-Induced Nonuniform Straining" @default.
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• W4381597841 doi "https://doi.org/10.1021/acs.nanolett.3c01774" @default.
• W4381597841 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/37347123" @default.
• W4381597841 hasPublicationYear "2023" @default.
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