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• W4381611122 abstract "SnS, Sb2Se3, Cu2SnS3, CuSb(S,Se)2, and Cu2BaSn(S,Se)4 are emerging as promising light absorbers for thin-film photovoltaics due to their extraordinary optoelectronic properties. However, improper band alignment with the buffer and large open-circuit voltage (VOC) deficit limits their power conversion efficiencies (PCE). Therefore, finding a suitable buffer that overcomes these obstacles is crucial. Herein, ZrS2 as an alternative buffer for the aforementioned emerging thin-film solar cells using SCAPS-1D is proposed. The important ZrS2 parameters are optimized, including bandgap, thickness, carrier concentration, and defect density. Interestingly, ZrS2 behaves as a degenerate semiconductor at carrier concentrations >1E17 cm−3, improving the conductivity of the solar cells; it also demonstrates a high defect tolerance nature when the defect density lies between 1E12 and 1E18 cm−3. After ZrS2 parameters optimization, the built-in potential of SnS, Sb2Se3, Cu2SnS3, CuSb(S,Se)2, and Cu2BaSn(S,Se)4 solar cells is enhanced by 0.2, 0.58, 0.05, 0.42, and 0.3 V, respectively, reducing recombination rate. Upon optimizing absorbers parameters, a PCE > 35% for SnS, Sb2Se3, and CuSb(S,Se)2 while >32% for Cu2SnS3 and Cu2BaSn(S,Se)4 solar cells is accomplished with low VOC loss (≈0.1 V). The absorbers must have high carrier concentration (1E20 cm−3) and low defect density (1E14 cm−3) to achieve these PCEs." @default.
• W4381611122 created "2023-06-23" @default.
• W4381611122 creator A5029351067 @default.
• W4381611122 creator A5060549916 @default.
• W4381611122 creator A5092232680 @default.
• W4381611122 date "2023-07-02" @default.
• W4381611122 modified "2023-09-25" @default.
• W4381611122 title "Theoretical Insights of Degenerate ZrS₂ as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells" @default.
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