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• W4381715086 abstract "High-detectivity and low-cost short-wave infrared photodetectors with complementary metal–oxide–semiconductor (CMOS) compatibility are attractive for various applications such as next-generation optical communication, LiDAR, and molecular sensing. Here, GeSn/Ge multiple-quantum-well (MQW) photodetectors with a dielectric nanohole array metasurface were proposed to realize high-detectivity and low-cost SWIR photodetection. The Ge nanohole array metasurface was utilized to enhance the light absorption in the GeSn/Ge MQW active layer. Compared with metallic nanostructures, the dielectric nanohole structure has the advantages of low intrinsic loss and CMOS compatibility. The introduction of metasurface architecture facilitates a 10.5 times enhanced responsivity of 0.232 A/W at 2 μm wavelength while slightly sacrificing the dark current density. Besides, the metasurface GeSn/Ge MQW photodetectors benefit 35% improvement in the 3 dB bandwidth compared to control GeSn/Ge MQW photodetectors, which can be attributed to the reduced RC delay. Due to the high responsivity and low dark current density, the room temperature specific detectivity at 2 μm is as high as 5.34 × 109 cm·Hz1/2/W, which is the highest among GeSn photodetectors and is better than commercial InSb and PbSe photodetectors operating at the similar wavelength. This work offers a promising approach for achieving low-cost and effective photodetection at 2 μm, contributing to the development of the 2 μm communication band." @default.
• W4381715086 created "2023-06-24" @default.
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• W4381715086 date "2023-06-23" @default.
• W4381715086 modified "2023-10-17" @default.
• W4381715086 title "A Route toward High-Detectivity and Low-Cost Short-Wave Infrared Photodetection: GeSn/Ge Multiple-Quantum-Well Photodetectors with a Dielectric Nanohole Array Metasurface" @default.
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• W4381715086 doi "https://doi.org/10.1021/acsnano.2c12625" @default.
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• W4381715086 hasPublicationYear "2023" @default.
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