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- W4381857177 abstract "An organic semiconductor, regioregular poly(3-hexylthiophene) (rrP3HT), based excitonic transistor on a piezoelectric YZ lithium niobate substrate is reported for the first time. The propagating surface acoustic wave (SAW) field ionizes the excitons, stores the charge pair in the SAW modulated potential field in the semiconductor, and carries them forward. A long-range transport ∼4.7 mm at room temperature has been demonstrated. The electrical control of the exciton flux was achieved with SAW propagating through a dual metal–insulator–semiconductor (MIS) structure. The working of the device has been demonstrated using white and green light. A threshold voltage of −20.65 V was observed, and the working mechanism of the proposed device has been verified through numerical analysis using MATLAB. The potential use of the proposed device structure as an all optical device was verified electrically with additional electrode terminals at the output end." @default.
- W4381857177 created "2023-06-25" @default.
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- W4381857177 date "2023-06-23" @default.
- W4381857177 modified "2023-10-16" @default.
- W4381857177 title "Acoustically Operated Excitonic Transistor Using Poly(3-hexylthiophene)" @default.
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- W4381857177 doi "https://doi.org/10.1021/acsaelm.3c00400" @default.
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