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• W4381857273 abstract "Abstract We demonstrate vertical Pt/TiO 2 / β -Ga 2 O 3 metal–dielectric–semiconductor (MDS) diodes and compare performance with co-fabricated Pt/ β -Ga 2 O 3 Schottky diodes (SBDs). The MDS diode exhibits a lower turn-on voltage and leakage current. In addition, the breakdown voltage increased from 548 V for an SBD to 1380 V for a MDS diode. The improvement in the off-state characteristics compared to a SBD while simultaneously reducing on-state losses leads to lower power dissipation at all duty cycles, indicating the great promise of this device architecture for advancing low-loss β -Ga 2 O 3 rectifiers toward material limits." @default.
• W4381857273 created "2023-06-25" @default.
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• W4381857273 date "2023-07-01" @default.
• W4381857273 modified "2023-09-23" @default.
• W4381857273 title "Vertical metal–dielectric–semiconductor diode on (001) β-Ga₂O₃ with high-κ TiO₂ interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown" @default.
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• W4381857273 doi "https://doi.org/10.35848/1882-0786/ace0f3" @default.
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