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• W4381884664 startingPage "071001" @default.
• W4381884664 abstract "Abstract Hall effect measurements were conducted for MOSFETs with and without post-oxidation-annealing (POA) fabricated on the p-body doping in a wide doping range to vary the effective normal field ( E eff ). The Hall mobility ( μ Hall ) in the high- E eff region of the MOSFETs annealed in phosphoryl chloride ( μ Hall = 41 cm 2 V −1 s −1 at E eff = 1.1 MV cm −1 ) is much higher than that of MOSFETs annealed in nitric oxide (NO) ( μ Hall = 14 cm 2 V −1 s −1 at E eff = 1.1 MV cm −1 ), suggesting that the trapped electrons act as strong Coulomb scattering centers for the MOSFETs annealed in NO and without POA." @default.
• W4381884664 created "2023-06-25" @default.
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• W4381884664 date "2023-07-01" @default.
• W4381884664 modified "2023-10-18" @default.
• W4381884664 title "High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO₂ interfaces annealed in POCl₃" @default.
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• W4381884664 doi "https://doi.org/10.35848/1882-0786/ace150" @default.
• W4381884664 hasPublicationYear "2023" @default.
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