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- W438190935 endingPage "42" @default.
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- W438190935 abstract "Publisher Summary This chapter discusses the defects in zinc oxide (ZnO). ZnO is a wide bandgap semiconductor material with numerous present applications, such as varistors and surface acoustic wave devices, and future applications, including UV light-emitting diodes and transparent field-effect transistors. However, all of these applications are either dependent upon, or are affected by, impurities and defects. It considers donor-type impurities H, Al, Ga, and In; and acceptor-type impurities N, P, As, and Sb. Among defects, it concentrates on Zn interstitials, Zn vacancies, O vacancies, and complexes of each. The main experimental techniques discussed in the chapter include temperature-dependent Hall-effect and low-temperature photoluminescence measurements, because they can alone provide donor and acceptor concentrations, and donor energies. Surface conduction is important in the Hall-effect analysis of annealed samples, and it is included by means of a two-layer analysis. The important topic of p-type ZnO is considered in some detail, especially in connection with the most useful acceptor dopants." @default.
- W438190935 created "2016-06-24" @default.
- W438190935 creator A5065378092 @default.
- W438190935 date "2006-01-01" @default.
- W438190935 modified "2023-09-23" @default.
- W438190935 title "Doping and Defects in ZnO" @default.
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- W438190935 doi "https://doi.org/10.1016/b978-008044722-3/50002-6" @default.
- W438190935 hasPublicationYear "2006" @default.
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