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• W4382056952 abstract "In this Letter, we describe a fabrication process for current injection into micrometer-size Ag/GaAs Tamm emitting diodes. It requires a special care to minimize surface damages as the Tamm mode is localized very close to the surface. Electroluminescence from GaAs quantum wells is demonstrated at room temperature, with a dispersion that follows the Tamm mode. For small diameters Tamm structures, in-plane confinement leads to electroluminescence into discretized energy modes. The observation of electrically excited emission from a confined diode is an important step toward the development of Tamm plasmon optical devices with new functionalities." @default.
• W4382056952 created "2023-06-27" @default.
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• W4382056952 date "2023-06-26" @default.
• W4382056952 modified "2023-09-27" @default.
• W4382056952 title "Confined Tamm plasmon light-emitting diodes" @default.
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• W4382056952 doi "https://doi.org/10.1063/5.0151792" @default.
• W4382056952 hasPublicationYear "2023" @default.
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