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- W4382073498 endingPage "086801" @default.
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- W4382073498 abstract "We report on ambipolar modulation doping of monolayer FeSe epitaxial films grown by molecular beam epitaxy and in situ spectroscopic measurements via a cryogenic scanning tunneling microscopy. It is found that hole doping kills superconductivity in monolayer FeSe films on metallic Ir(001) substrates, whereas electron doping from polycrystalline IrO 2 /SrTiO 3 substrate enhances significantly the superconductivity with an energy gap of 10.3 meV. By exploring substrate-dependent superconductivity, we elucidate the essential impact of substrate work functions on the superconductivity of monolayer FeSe films. Our results therefore offer a valuable reference guide for further enhancement of the transition temperature T c in FeSe-based superconductors by interface engineering." @default.
- W4382073498 created "2023-06-27" @default.
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- W4382073498 date "2023-07-01" @default.
- W4382073498 modified "2023-09-25" @default.
- W4382073498 title "Ambipolar Doping of Monolayer FeSe by Interface Engineering" @default.
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- W4382073498 doi "https://doi.org/10.1088/0256-307x/40/8/086801" @default.
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