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• W4382138870 abstract "In this letter, we investigate afterpulsing in 26 and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$100~mu text{m}$ </tex-math></inline-formula> diameter planar geometry Ge-on-Si single-photon avalanche diode (SPAD) detectors, by use of the double detector gating method with a gate width of 50 ns. Ge-on-Si SPADs were found to exhibit a 1% afterpulsing probability at a delay time of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$200~mu text{s}$ </tex-math></inline-formula> and temperature of 78 K, and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$130~mu text{s}$ </tex-math></inline-formula> at a temperature of 150 K. These delay times were measured with an excess bias of 3.5% applied, which corresponded to a single-photon detection efficiency of 15% at <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$1.31~mu text{m}$ </tex-math></inline-formula> . We demonstrate that reducing the detector diameter can also be an effective way to restrict afterpulsing in this material system." @default.
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• W4382138870 date "2023-09-01" @default.
• W4382138870 modified "2023-10-15" @default.
• W4382138870 title "Afterpulsing in Ge-on-Si Single-Photon Avalanche Diodes" @default.
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• W4382138870 doi "https://doi.org/10.1109/lpt.2023.3289653" @default.
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