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- W4382196368 abstract "Solution processed metal organic thin film was found to act as an efficient and stable electron injection layer (EIL) in inverted organic light emitting diodes (iOLEDs). Mild annealing of zinc(II) methoxyethoxide (ZME) under N2 resulted in nanocrystals of ZnO (nc-ZnO) within highly compact amorphous gel of ZME (ag-ZME). While well-crystallized ZnO caused a strong electron leakage to reduce device efficiency, the ag-ZME processed at a temperature as low as 30 °C did work efficiently. DC capacitance analysis revealed a highly dielectric behavior of ag-ZME that achieves selective electron injection to the emission layer, while preventing non-emissive direct reduction of hole, unlike crystalline ZnO with intra-band defect states to cause electron leakage. We also employed calcium(II) methoxyethoxide (CME) as an EIL and demonstrated almost the same performance in iOLEDs. The 4s orbitals of Ca(II) and Zn(II) in ag-CME and ag-ZME are used to regulate the electron injection, whereas the redundantly high conductivity of crystalline ZnO can only reduce the efficiency. The iOLED with a balanced nc-ZnO/ag-ZME by annealing at 100 °C achieved a high current efficiency of 25.5 cd A−1 and an operating half-life stability exceeding 2000 h @100 cd m−2, appealing for its practical use in iOLEDs." @default.
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- W4382196368 date "2023-11-01" @default.
- W4382196368 modified "2023-10-17" @default.
- W4382196368 title "Amorphous dielectric metal-organic electron injection layer for efficient inverted organic light-emitting diodes" @default.
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- W4382196368 doi "https://doi.org/10.1016/j.orgel.2023.106878" @default.
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