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- W4382393832 abstract "In this communication, porous silicon samples were prepared by pulsed photo-electrochemical etching using HF based solution. The porosity of silicon substrate was changed by applying electroless chemical etching process prior to photo-electrochemical anodization. A novel parameter of delay time (Td) was described in the shape of current, besides cycle time (T) and pause time (Toff) of pulsed current which could influence the morphology of pores. Our results showed that applying the delay time can produce uniform porous layers. A coplanar structure of Ni was evaporated on porous layers in order to fabricate Schottky contacts for studying the I–V characteristics of the metal–semiconductor– metal (MSM) photodetectors. For improving the quality of electrical contacts, all of the samples were subjected to the annealing in a conventional tube furnace under flow of nitrogen gas. By considering the quantum confinement theory, it was found that electrical characteristics of porous samples measured in dark (Id) and under illumination (IPh) can be fitted well by the equations of thermionic emission. From this point of view, Schottky barrier height (SBH) and ideality factor (n) of fabricated photodetectors were calculated. The results showed that surface morphology of porous silicon can affect the electrical properties of fabricated photodetectors if the quality of electric contact is optimized. As an overall view ideal electric contacts on porous silicon can improve the sensitivity of devices even for PS with micro-sized porous surface." @default.
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- W4382393832 date "2012-11-01" @default.
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- W4382393832 title "Effect of Surface Morphology on Electrical Properties of Electrochemically-Etched Porous Silicon Photodetectors" @default.
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- W4382393832 doi "https://doi.org/10.1016/s1452-3981(23)16962-8" @default.
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