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Matches in SemOpenAlex for { <https://semopenalex.org/work/W4382394544> ?p ?o ?g. }

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• W4382394544 abstract "The GaN ultraviolet metal-semiconductor-metal (MSM) photodetectors epitaxially grown on Si (111) and sapphire (0001) substrates were prepared and characterized. By implementing our elaborate AlN/AlGaN buffer multilayer scheme on Si, the maximum responsivity of n–-GaN MSM photodetector with TiW transparent electrodes achieved at an incident wavelength of 359 nm was 0.187 A/W, which corresponds to the quantum efficiency of 64.7%. Furthermore, for a given bandwidth of 1 kHz and a given bias of 5 V, the corresponding noise equivalent power (NEP) of aforementioned photodetector was 1.53×10-12 W, which translates to a maximal detectivity (D*) of 1.31×1012 cm-Hz0.5W-1." @default.
• W4382394544 created "2023-06-29" @default.
• W4382394544 creator A5039419603 @default.
• W4382394544 date "2013-08-01" @default.
• W4382394544 modified "2023-09-29" @default.
• W4382394544 title "Fabrication of Crack-Free Metal-Semiconductor-Metal Ultraviolet Photodetectors on Si (111) Substrates Based on Novel AlN/AlGaN Buffer Multilayer Scheme" @default.
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• W4382394544 doi "https://doi.org/10.1016/s1452-3981(23)13110-5" @default.
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