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• W4382407483 abstract "High capacitance and low leakage current of capacitors are crucial for scaling down dynamic random access memory (DRAM). In this study, high-work-function (WF) indium sesquioxide (In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> ) and vanadium pentoxide (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> ) ultrathin films were inserted as interlayers to reduce the leakage current of capacitors by using a titanium dioxide (TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) dielectric, which has a particularly high dielectric constant. This modification improved the morphology and increased the conduction-band offset. Consequently, the leakage current was reduced by more than 3500 times compared with that of the device without an interlayer. Furthermore, each interlayer functioned as a seed layer in the growth of TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and exhibited a change in the crystallinity of the anatase phase, which resulted in an increase of 12.5% in capacitance. These results revealed that the proposed method effectively reduced the leakage current and maintained capacitor capacitance, thereby addressing a critical problem of TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> dielectrics." @default.
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• W4382407483 date "2023-08-01" @default.
• W4382407483 modified "2023-10-06" @default.
• W4382407483 title "Leakage Current Minimization of TiO₂-Based Metal–Insulator–Metal Capacitors Using High-Work-Function In₂O₃ and V₂O₅ Ultrathin Interlayers" @default.
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• W4382407483 doi "https://doi.org/10.1109/ted.2023.3287812" @default.
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