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- W4382582370 abstract "Cu-doped silicon film was prepared by Ionion-beam sputtering in the work. The facilitation of doping Cu for the electrochemical performance of silicon film as anode materials for lithium ion batteries was demonstrated. Although the thickness of deposited Cu-doped silicon film was up to 10 μm, much thicker than the reported ones, excellent electrochemical performance was obtained. The results demonstrated that the coulombic efficiency of the 10 μm silicon composite film could be up to 80% although free of conductive and binder additives. The capacity retention after 100 cycles could be up to 93.8 % of that for the second cycle. Microcracks were observed on the surface of silicon film electrode after cycling, but no obvious exfoliation was found even after 300 cycles. The continuous maintenance of the electronic contact might be the main reason for the stable electrochemical cyclability of silicon film electrodes. Co-deposited Cu by sputtering makes the dimensional size of silicon film extended to micrometer scale without deteriorating its cycling performance." @default.
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- W4382582370 date "2013-08-01" @default.
- W4382582370 modified "2023-10-14" @default.
- W4382582370 title "Cu-doped Silicon Film as Anode for Lithium ion Batteries Prepared by Ion-beam Sputtering" @default.
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- W4382582370 doi "https://doi.org/10.1016/s1452-3981(23)13099-9" @default.
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