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• W4383215160 abstract "Abstract Driving a spin‐logic circuit requires the production of a large output signal by spin‐charge interconversion in spin‐orbit readout devices. This should be possible by using topological insulators, which are known for their high spin‐charge interconversion efficiency. However, high‐quality topological insulators have so far only been obtained on a small scale, or with large scale deposition techniques that are not compatible with conventional industrial deposition processes. The nanopatterning and electrical spin injection into these materials have also proven difficult due to their fragile structure and low spin conductance. The fabrication of a spin‐orbit readout device from the topological insulator Sb 2 Te 3 deposited by large‐scale industrial magnetron sputtering on SiO 2 is presented. Despite a modification of the Sb 2 Te 3 layer structural properties during the device nanofabrication, a sizeable output voltage is measured that can be unambiguously ascribed to a spin‐charge interconversion process. The results pave the way for the integration of layered van der Waals materials in spin‐logic devices." @default.
• W4383215160 created "2023-07-06" @default.
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• W4383215160 date "2023-07-05" @default.
• W4383215160 modified "2023-10-18" @default.
• W4383215160 title "Spin‐Orbit Readout Using Thin Films of Topological Insulator Sb₂Te₃ Deposited by Industrial Magnetron Sputtering" @default.
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• W4383215160 doi "https://doi.org/10.1002/adfm.202303878" @default.
• W4383215160 hasPublicationYear "2023" @default.
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