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- W4383313376 abstract "This paper introduces the characterization of the Dual- Metal Junctionless Accumulation-Mode Nanowire FET (DM-JAM-NWFET) at cryogenic temperatures. Mathematical model has been developed by using the 2-D Poisson's equation under the relevant boundary conditions. It is perceived from the study that at cryogenic temperatures, the performance of the considered FET does not differ by a significant amount when compared to that at room temperature. By varying the temperature from 50 K to 300 K, it is noticed that the variation in center potential, electric field, transconductance, output conductance, drain current are almost minimum. The TCAD results were achieved by deploying ATLAS 3-D device simulator and were also contrasted along with the numerical results." @default.
- W4383313376 created "2023-07-07" @default.
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- W4383313376 date "2023-09-01" @default.
- W4383313376 modified "2023-10-08" @default.
- W4383313376 title "Modeling of Dual- Metal Junctionless Accumulation-Mode cylindrical surrounding gate (DM-JAM-CSG) MOSFET for cryogenic temperature applications" @default.
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- W4383313376 doi "https://doi.org/10.1016/j.mejo.2023.105880" @default.
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