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- W4383504144 abstract "This chapter describes general aspects of epitaxy which denotes the growth of crystalline layers with order given by a crystalline substrate. A focus is on molecular beam epitaxy (MBE) representing a powerful method for epitaxy in particular of ultra-clean two-dimensional semiconductor heterostructures, where the precise control on the composition, size, and roughness of the deposited layers enables an engineering of the band gaps and doping profiles. Using self-assembled growth schemes, also one-dimensional nanowires and zero-dimensional quantum dots can be fabricated without the need for lithography. Discussed topics are technological aspects, basics of crystal growth, epitaxy of strained layers, strain-induced and droplet-based self-assembly, and in situ growth monitoring with focus on electron diffraction." @default.
- W4383504144 created "2023-07-08" @default.
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- W4383504144 date "2024-01-01" @default.
- W4383504144 modified "2023-10-12" @default.
- W4383504144 title "Epitaxy (classical MBE)" @default.
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- W4383504144 doi "https://doi.org/10.1016/b978-0-323-90800-9.00205-5" @default.
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