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- W4383602823 abstract "We study the desorption of In in InGaN nanowire (NW) growth on Si, generating a unique light emitter. With increasing growth temperature above the onset of In desorption, uniform, In-rich InGaN NWs evolve into the intermediate core–shell InGaN NW structures with In-rich core and In-poor shell before the In-rich core is dissolved and pure GaN NWs are left. The different InGaN NW structures are characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy, transmission electron microscopy (TEM), and energy-dispersive X-ray (EDX) spectroscopy. A growth model is developed to understand the distinct growth regimes by the interplay of anisotropic In surface diffusion and In desorption on the m-plane NW sidewalls and the c-plane NW top. The self-formed core–shell InGaN NWs are identified as the active region of our InGaN red light-emitting diode." @default.
- W4383602823 created "2023-07-08" @default.
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- W4383602823 date "2023-07-08" @default.
- W4383602823 modified "2023-10-17" @default.
- W4383602823 title "In Desorption in InGaN Nanowire Growth on Si Generates a Unique Light Emitter: From In-Rich InGaN to the Intermediate Core–Shell InGaN to Pure GaN" @default.
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- W4383602823 doi "https://doi.org/10.1021/acs.cgd.3c00622" @default.
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