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• W4383681764 startingPage "411" @default.
• W4383681764 abstract "Vanadium dioxide (VO2) thin films exhibit a metal–insulator transition (MIT) near room temperature with sensitivity to the lattice strain. MIT property has been tuned by W-doping, fabrication of nanowires, etc. In addition to these methods, use of step and terrace structures could be a prospective candidate to control the MIT property since VO2 is sensitive to the lattice strain at the interface between thin films and substrates. In this study, VO2/TiO2 microwires were fabricated following the thin film growth to investigate the in-plane crystal orientation dependence of the MIT property. The VO2/TiO2 microwires with step and terrace structures exhibited a more significant MIT anisotropy, which is promising for strain engineering in device applications." @default.
• W4383681764 created "2023-07-10" @default.
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• W4383681764 date "2023-07-10" @default.
• W4383681764 modified "2023-09-26" @default.
• W4383681764 title "Novel Method of Controlling the Metal–insulator Transition Anisotropy of VO₂ Thin Films by Using Step and Terrace Structures" @default.
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• W4383681764 doi "https://doi.org/10.1380/vss.66.411" @default.
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