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• W4383710680 endingPage "33867" @default.
• W4383710680 startingPage "33858" @default.
• W4383710680 abstract "Here, we propose phase and interfacial engineering by inserting a functional WO3 layer and selenized it to achieve a 2D-layered WSe2/WO3 heterolayer structure by a plasma-assisted selenization process. The 2D-layered WSe2/WO3 heterolayer was coupled with an Al2O3 film as a resistive switching (RS) layer to form a hybrid structure, with which Pt and W films were used as the top and bottom electrodes, respectively. The device with good uniformity in SET/RESET voltage and high low-/high-resistance window can be obtained by controlling a conversion ratio from a WO3 film to a 2D-layered WSe2 thin film. The Pt/Al2O3/(2D-layered WSe2/WO3)/W structure shows remarkable improvement to the pristine Pt/Al2O3/W and Pt/Al2O3/2D-layered WO3/W in terms of low SET/RESET voltage variability (−20/20)%, multilevel characteristics (uniform LRS/HRS distribution), high on/off ratio (104–105), and retention (∼105 s). The thickness of the obtained WSe2 was tuned at different gas ratios to optimize different 2D-layered WSe2/WO3 (%) ratios, showing a distinctive trend of reduced and uniform SET/RESET voltage variability as 2D-layered WSe2/WO3 (%) changes from 90/10 (%) to 45/55 (%), respectively. The electrical measurements confirm the superior ability of the metallic 1T phase of the 2D-layered WSe2 over the semiconducting 2H phase. Through systemic studies of RS behaviors on the effect of 1T/2H phases and 2D-layered WSe2/WO3 ratios, the low-temperature plasma-assisted selenization offers compatibility with the temperature-limited 3D integration process and also provides much better thickness control over a large area." @default.
• W4383710680 created "2023-07-11" @default.
• W4383710680 creator A5001905377 @default.
• W4383710680 creator A5010576271 @default.
• W4383710680 creator A5011710157 @default.
• W4383710680 creator A5012327097 @default.
• W4383710680 creator A5013883831 @default.
• W4383710680 creator A5014871303 @default.
• W4383710680 creator A5023233175 @default.
• W4383710680 creator A5055827613 @default.
• W4383710680 creator A5064876453 @default.
• W4383710680 creator A5072144144 @default.
• W4383710680 creator A5080249196 @default.
• W4383710680 creator A5081561953 @default.
• W4383710680 date "2023-07-10" @default.
• W4383710680 modified "2023-10-15" @default.
• W4383710680 title "Phase/Interfacial-Engineered Two-Dimensional-Layered WSe₂ Films by a Plasma-Assisted Selenization Process: Modulation of Oxygen Vacancies in Resistive Random-Access Memory" @default.
• W4383710680 cites W1530377216 @default.
• W4383710680 cites W1738725609 @default.
• W4383710680 cites W1964461927 @default.
• W4383710680 cites W1964833920 @default.
• W4383710680 cites W1978566690 @default.
• W4383710680 cites W1996764478 @default.
• W4383710680 cites W2024627226 @default.
• W4383710680 cites W2037608121 @default.
• W4383710680 cites W2038331561 @default.
• W4383710680 cites W2038644450 @default.
• W4383710680 cites W2100946869 @default.
• W4383710680 cites W2142404573 @default.
• W4383710680 cites W2149581862 @default.
• W4383710680 cites W2150484985 @default.
• W4383710680 cites W2298310997 @default.
• W4383710680 cites W2342569913 @default.
• W4383710680 cites W2510334667 @default.
• W4383710680 cites W2563835894 @default.
• W4383710680 cites W2597451277 @default.
• W4383710680 cites W2610316504 @default.
• W4383710680 cites W2615015060 @default.
• W4383710680 cites W2739572836 @default.
• W4383710680 cites W2749339773 @default.
• W4383710680 cites W2754313487 @default.
• W4383710680 cites W2769049661 @default.
• W4383710680 cites W2774297425 @default.
• W4383710680 cites W2781720065 @default.
• W4383710680 cites W2797050667 @default.
• W4383710680 cites W2800264288 @default.
• W4383710680 cites W2810853921 @default.
• W4383710680 cites W2893616744 @default.
• W4383710680 cites W2897794401 @default.
• W4383710680 cites W2903343625 @default.
• W4383710680 cites W2904302621 @default.
• W4383710680 cites W2911457921 @default.
• W4383710680 cites W2925192439 @default.
• W4383710680 cites W2947382718 @default.
• W4383710680 cites W2961673845 @default.
• W4383710680 cites W2967207911 @default.
• W4383710680 cites W2973952117 @default.
• W4383710680 cites W2979890160 @default.
• W4383710680 cites W2984707426 @default.
• W4383710680 cites W3006423901 @default.
• W4383710680 cites W3021635855 @default.
• W4383710680 cites W3039667664 @default.
• W4383710680 cites W3046740739 @default.
• W4383710680 cites W4200416705 @default.
• W4383710680 doi "https://doi.org/10.1021/acsami.3c05384" @default.
• W4383710680 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/37428508" @default.
• W4383710680 hasPublicationYear "2023" @default.
• W4383710680 type Work @default.
• W4383710680 citedByCount "2" @default.
• W4383710680 countsByYear W43837106802023 @default.
• W4383710680 crossrefType "journal-article" @default.
• W4383710680 hasAuthorship W4383710680A5001905377 @default.
• W4383710680 hasAuthorship W4383710680A5010576271 @default.
• W4383710680 hasAuthorship W4383710680A5011710157 @default.
• W4383710680 hasAuthorship W4383710680A5012327097 @default.
• W4383710680 hasAuthorship W4383710680A5013883831 @default.
• W4383710680 hasAuthorship W4383710680A5014871303 @default.
• W4383710680 hasAuthorship W4383710680A5023233175 @default.
• W4383710680 hasAuthorship W4383710680A5055827613 @default.
• W4383710680 hasAuthorship W4383710680A5064876453 @default.
• W4383710680 hasAuthorship W4383710680A5072144144 @default.
• W4383710680 hasAuthorship W4383710680A5080249196 @default.
• W4383710680 hasAuthorship W4383710680A5081561953 @default.
• W4383710680 hasConcept C119599485 @default.
• W4383710680 hasConcept C121332964 @default.
• W4383710680 hasConcept C127413603 @default.
• W4383710680 hasConcept C147789679 @default.
• W4383710680 hasConcept C165801399 @default.
• W4383710680 hasConcept C171250308 @default.
• W4383710680 hasConcept C17525397 @default.
• W4383710680 hasConcept C178790620 @default.
• W4383710680 hasConcept C182019814 @default.
• W4383710680 hasConcept C185592680 @default.
• W4383710680 hasConcept C19067145 @default.
• W4383710680 hasConcept C192562407 @default.
• W4383710680 hasConcept C2779227376 @default.
• W4383710680 hasConcept C44280652 @default.
• W4383710680 hasConcept C49040817 @default.

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