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• W4383747922 abstract "Recent studies have investigated the effects of varying the thickness and bulk defect density of CsPbI <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> perovskite films on their optoelectronic properties. It has been found that as the thickness of the perovskite layer increases from 50 to 500 nm, the absorption coefficient decreases, resulting in a reduction in the overall efficiency of solar cells. Furthermore, thicker films have been observed to exhibit a higher density of defects and trap states, which can decrease the charge carrier mobility and increase recombination rates, leading to a further decrease in device performance. On the other hand, by controlling the bulk defect density within the range of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>14</sup> to 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>18</sup> , it is possible to optimize the properties of the CsPbI <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> perovskite material. A lower bulk defect density has been found to enhance the stability of the material and reduce the formation of trap states, resulting in a higher efficiency of the device. Overall, the results suggest that controlling the thickness and bulk defect density of CsPbI <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> perovskite films is crucial for achieving optimal device performance." @default.
• W4383747922 created "2023-07-11" @default.
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• W4383747922 date "2023-05-26" @default.
• W4383747922 modified "2023-09-23" @default.
• W4383747922 title "Optimizing Optoelectronic Properties of CsPbI₃ Perovskite Films through Control of Thickness and Bulk Defect Density" @default.
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• W4383747922 doi "https://doi.org/10.1109/incet57972.2023.10169934" @default.
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