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- W4383894039 abstract "This paper investigates the device noise and linearity of an AlGaN/GaN HEMT with an optimized Γ-Gate structure for Ka-band applications. The Γ-Gate was used to provide low gate resistance for the device by increasing the gate cross-section and acting as a gate field plate to achieve a flat transconductance (G m ) profile. The device’s G m profile was analyzed under different gate positions, including at the center or close to the source. Under different bias conditions, we performed the optimization of the Γ-gate head length (L head ). The results show that an excellent minimum noise figure (NF min ) for the device can be achieved when the Γ-gate is positioned close to the source with an optimum L head . Finally, the NF min improved from 1.9 dB to 1.59 dB and the third-order intercept point (OIP3) value improved from 27.7 dBm to 31.1 dBm when the source-drain distance (L SD ) was reduced from <?CDATA $2.5,mu {rm{m}}$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mn>2.5</mml:mn> <mml:mspace width=0.25em /> <mml:mi>μ</mml:mi> <mml:mi mathvariant=normal>m</mml:mi> </mml:math> to <?CDATA $2,mu {rm{m}}.$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mn>2</mml:mn> <mml:mspace width=0.25em /> <mml:mi>μ</mml:mi> <mml:mi mathvariant=normal>m</mml:mi> <mml:mo>.</mml:mo> </mml:math> It was demonstrated that the optimized Γ-Gate design has the potential to attain the device with low noise and high linearity." @default.
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- W4383894039 date "2023-07-01" @default.
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- W4383894039 title "Study of Low Noise with High Linearity AlGaN/GaN HEMTs by Optimizing Γ-Gate Structure for Ka-Band Applications" @default.
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- W4383894039 doi "https://doi.org/10.1149/2162-8777/ace653" @default.
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