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- W4384009249 abstract "Silicon Carbide (SiC) is a very attractive semiconductor material because both n-type and p-type doping control is possible like as Si. However, it must be noted that the diffusivity of the dopants in SiC crystal is extremely low. In Si crystal, the diffusivity of the typical dopants is around 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-11</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /s at the temperature of 1,200 to 1,300 °C, while in SiC crystal, even boron atom with highest diffusivity among dopant candidates has the value of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-14</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /s even though at the quite high temperature of 1,700 °C [1]. The diffusivity of the donors as phosphorus and nitrogen are four to five orders of magnitude lower than that of boron [2]. Due to such small diffusivity of the dopants, selective area doping technique by the diffusion cannot be applied in SiC. Consequently, ion implantation technique is the only possible way for selective area doping in SiC." @default.
- W4384009249 created "2023-07-13" @default.
- W4384009249 creator A5085725578 @default.
- W4384009249 date "2023-06-08" @default.
- W4384009249 modified "2023-09-23" @default.
- W4384009249 title "Junction Technology on SiC Power Devices" @default.
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- W4384009249 doi "https://doi.org/10.23919/iwjt59028.2023.10175096" @default.
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