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- W4384025990 abstract "Gallium oxide (Ga <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> ) has attracted great attention as a next-generation power electronics material because of its extremely large bandgap energy of 4.5 eV and the existence of high-quality single-crystal substrates that can be manufactured from melt-grown bulks [1 –4]. Although it is not well known, Ga <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> possesses excellent applicability of ion implantation doping processes unlike conventional compound semiconductors." @default.
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- W4384025990 date "2023-06-08" @default.
- W4384025990 modified "2023-09-23" @default.
- W4384025990 title "Ion Implantation Doping Technology for Ga<sub>2</sub>O<sub>3</sub> and Its Application to Device Fabrication" @default.
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- W4384025990 doi "https://doi.org/10.23919/iwjt59028.2023.10175103" @default.
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