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• W4384080201 abstract "Based on the bulk-Si substrate, the CMOS tree-like FETs including the FishboneFETs with bottom SiGe nano-fin and the TreeFETs without bottom SiGe nano-fin were both designed and experimentally fabricated. The growth of bottom SiGe layer with different Ge fraction following by an accurately selective etching is developed for realizing SiGe nano-fins between Si nanosheets (NSs). The results show that the <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</sub> / <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>off</sub> ratio (over 1×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sup> ) and the short channel effects (SCEs) of TreeFETs are effectively optimized, and the effective channel width ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>W</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>eff</sub> is increased for FishboneFETs on the same footprint. Due to the hole conduction advantage of SiGe nano-fin, the on-current ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</sub> ) of p-type TreeFETs can be higher than that of n-type TreeFETs at <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OV</sub> =| <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>gs</sub> - <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> |=0.5 V. Meanwhile, the surface scattering of SiGe nano-fin also affects the effective field-effect mobility. As the <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>L</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g</sub> scaling, both p-type tree-like FETs exhibit more obvious SCEs than n-type devices, which is maybe the reason of a lower hole barrier occurring by the valence band offset (Δ <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>E</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>v</sub> ) obtained in the strained SiGe nano-fin. The results provided one meaningful guide for tree-like FETs optimizing future GAAFET process and CMOS circuits." @default.
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• W4384080201 date "2023-09-01" @default.
• W4384080201 modified "2023-10-16" @default.
• W4384080201 title "Investigation of Fabricated CMOS FishboneFETs and TreeFETs With Strained SiGe Nano-Fins on Bulk-Si Substrate" @default.
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• W4384080201 doi "https://doi.org/10.1109/led.2023.3294545" @default.
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