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- W4384080225 abstract "This paper presents a compact model for organic thin-film transistors fabricated in the staggered or coplanar device architecture which includes short-channel effects related to the potential barrier in the channel region, which manifest themselves as threshold voltage roll-off, drain-induced barrier lowering, and subthreshold swing degradation. Furthermore, the effect of non-linear injection due to a work-function mismatch between the source/drain contacts and the semiconductor is considered. The model includes a charge-based capacitance model considering overlap and fringing regions in short-channel multi-finger layout structures. Extensions include a model for drain-current variability, low-frequency noise and non-quasistatic effects. The introduction of physically meaningful fitting parameters provides a high degree of flexibility to the model. The equation package is verified using the results of measurements performed on transistors fabricated on flexible substrates and is available in Verilog-A for an efficient circuit simulation on different design platforms." @default.
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- W4384080225 date "2023-01-01" @default.
- W4384080225 modified "2023-10-18" @default.
- W4384080225 title "THM-OTFT: A Complete Physics-Based Verilog-A Compact Model for Short-Channel Organic Thin-Film Transistors" @default.
- W4384080225 doi "https://doi.org/10.1109/jeds.2023.3294598" @default.
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