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• W4384080493 abstract "In this letter, we present a charge-based model to describe the flicker/low-frequency noise behavior in GaN HEMTs. We study flicker noise and introduce the model for frequencies ranging from 10Hz to 10KHz across a wide temperature range (300K to 4.2K). While noise models for GaN HEMTs have been reported previously, including the state-of-the-art ASM HEMT model, an accurate model accounting for the significant gate bias dependence of flicker noise as it approaches the sub-threshold region is still missing. To address this need, we incorporate a separate sub-threshold region noise component. The proposed model effectively captures the flicker noise associated with an AlGaN/GaN HEMT device from sub-threshold to above-threshold, down to cryogenic temperatures, and the same has been validated against experimental data." @default.
• W4384080493 created "2023-07-13" @default.
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• W4384080493 date "2023-09-01" @default.
• W4384080493 modified "2023-09-26" @default.
• W4384080493 title "Charge-Based Flicker Noise Modeling of GaN HEMTs Down to Cryogenic Temperatures" @default.
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• W4384080493 doi "https://doi.org/10.1109/led.2023.3294552" @default.
• W4384080493 hasPublicationYear "2023" @default.
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