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- W4384080505 abstract "This study investigates the electrical mechanisms of the organic thin-film transistor (OTFT) with an asymmetric U-I electrode structure under hot-carrier stress (HCS). The threshold voltage shifts negatively and a dual-channel phenomenon occurs. In addition, the degradation behaviors of the linear and saturated ID-VG transfer curves are different. These are attributed to the non-uniform electric-field and heat distribution, which results in the non-uniform trapped holes in the organic-gate insulator-1 by charge trapping model during HCS. Finally, physical mechanisms based on COMSOL simulations and energy bands are proposed to clarify the degradation phenomena." @default.
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- W4384080505 date "2023-09-01" @default.
- W4384080505 modified "2023-10-05" @default.
- W4384080505 title "Asymmetric Electrode Structure Induces Dual-Channel Phenomenon Under Hot-Carrier Stress in Organic Thin-Film Transistors" @default.
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- W4384080505 doi "https://doi.org/10.1109/led.2023.3294551" @default.
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