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• W4384080787 abstract "Low-noise amplification performance of an enhancement-mode <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>p</i> -GaN gate high electron mobility transistor (HEMT) is thoroughly investigated. Featuring a tungsten (W) gate metal and CMOS-compatible metal contacts to source/drain terminals, the device exhibits a positive threshold voltage of 2.7 V. Low gate leakage current density (I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ) of 3.8 pA/mm and 16.3 nA/mm are extracted in pinch-off region and on-state region, respectively. The device delivers an input third-order interception point (IIP3) of 15.8 dBm at 2 GHz, together with good immunity of linearity characteristics against frequency change. A minimum noise figure ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>NF</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>min</sub> ) of 0.9 dB with an associated gain (G <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>a</sub> ) of 12.8 dB are achieved at a working frequency of 2 GHz. Furthermore, an examination of the bias and frequency effects on <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>NF</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>min</sub> and G <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>a</sub> reveals <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>NF</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>min</sub> of 0.65 dB and G <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>a</sub> of 18.3 dB at 1 GHz. This work paves a solid path for the utilization of <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>p</i> -GaN HEMT for low noise amplifier applications." @default.
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• W4384080787 date "2023-09-01" @default.
• W4384080787 modified "2023-09-27" @default.
• W4384080787 title "RF <i>p</i>-GaN HEMT With 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications" @default.
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• W4384080787 doi "https://doi.org/10.1109/led.2023.3294696" @default.
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