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- W4384200427 abstract "Single and double quantum dot (QD) transistors have been used to investigate entropy transitions in the single particle limit. Precisely controlled QD electron states allow a few-particle thermodynamic system to be defined. Charge stability diagrams are calculated to find the Gibbs entropy $S$ vs bias voltage, providing a framework to define single particle entropy diagrams. The calculation method is applied to experimental dopant atom QD transistor characteristics. As multiple states become occupied, $S$ increases in a stepwise manner towards $S=klnmathrm{ensuremath{Omega}}$, where $mathrm{ensuremath{Omega}}$ is the total number of microstates, retaining the Boltzmann interpretation of entropy. The $Ttext{ensuremath{-}}S$ diagram vs gate voltage, where $T$ is temperature, reflects underlying single particle state transitions and enables the definition of heat cycles. These diagrams approximate the behavior of macroscopic phase changes in magnetic, liquid-vapor, and superconducting systems." @default.
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- W4384200427 date "2023-07-13" @default.
- W4384200427 modified "2023-09-24" @default.
- W4384200427 title "Single particle entropy stability and the temperature-entropy diagram in quantum dot transistors" @default.
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- W4384200427 doi "https://doi.org/10.1103/physrevresearch.5.033025" @default.
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