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• W4384200478 abstract "$beta$-Ga$_2$O$_3$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at breakdown voltage as of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in $beta$-Ga$_2$O$_3$ vertical power devices." @default.
• W4384200478 created "2023-07-14" @default.
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• W4384200478 date "2023-07-10" @default.
• W4384200478 modified "2023-09-25" @default.
• W4384200478 title "<b> <i>β</i> </b>-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching" @default.
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• W4384200478 doi "https://doi.org/10.1063/5.0151808" @default.
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