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- W4384204400 abstract "We study the anomalous Hall effect in a disordered Weyl semimetal. While the intrinsic contribution is expressed solely in terms of Berry curvature, the extrinsic contribution is given by a combination of the skew-scattering and side-jump terms. For the model of small-size impurities, we are able to express the skew-scattering contribution in terms of scattering phase shifts. We identify the regime in which the skew-scattering contribution dominates the side-jump contribution: the impurities are either strong or resonant and at dilute concentration. In this regime, the Hall resistivity ${ensuremath{rho}}_{xy}$ is expressed in terms of two scattering phases, analogous to the $s$-wave scattering phase in a nontopological metal. We compute the dependence of ${ensuremath{rho}}_{xy}$ on the chemical potential and show that ${ensuremath{rho}}_{xy}$ scales with temperature as ${T}^{2}$ in low temperatures and as ${T}^{3/2}$ in the high-temperature limit." @default.
- W4384204400 created "2023-07-14" @default.
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- W4384204400 date "2023-07-13" @default.
- W4384204400 modified "2023-09-30" @default.
- W4384204400 title "Anomalous Hall effect in disordered Weyl semimetals" @default.
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- W4384204400 doi "https://doi.org/10.1103/physrevb.108.045121" @default.
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