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- W4384283025 abstract "Abstract Chemical vapor reaction is a simple and efficient experimental means of preparing metal sulphide films. Through systematically studying the effect of vulcanisation temperature on the growth of copper sulfide (CuS) thin film. The copper antimony sulfide (Cu 3 SbS 4 ) thin film was obtained by further vulcanized Sb/Cu mental film. The structure and optical properties of the as-prepared films were characterized by x-ray diffraction, Raman and photoluminescence spectra. The hexagonal structure of CuS film was confirmed and Cu 3 SbS 4 grew preferentially along the (112) crystal plane. The surface grains of CuS and Cu 3 SbS 4 films were finally condensed into spheres. The content of S and the resistance of the films increase with the increase in temperature, but the bandgap of the films will be decreased. The bandgap of Cu 2−x S films prepared at 195 °C−350 °C is in the range of 2.2–2.5 eV and that of Cu 3 SbS 4 thin films prepared at 350 °C is 1.77 eV, and has good absorption in the visible light range. In addition, The Hall effect measurement indicated CuS and Cu 3 SbS 4 films have p-type semiconducting behavior. The carrier concentration and mobility are 2.45 × 10 21 cm −3 and 1.28 cm 2 Vs −1 for CuS, and 4.30 × 10 17 cm −3 and 185.93 cm 2 Vs −1 for Cu 3 SbS 4 , respectively. The I-T tests show that the CuS and Cu 3 SbS 4 thin films have photoconductive properties." @default.
- W4384283025 created "2023-07-15" @default.
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- W4384283025 date "2023-07-27" @default.
- W4384283025 modified "2023-09-25" @default.
- W4384283025 title "Chemical vapor reaction synthesis and photoelectronic properties of CuS and Cu<sub>3</sub>SbS<sub>4</sub> thin films" @default.
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- W4384283025 doi "https://doi.org/10.1088/1402-4896/ace7a0" @default.
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