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• W4384304074 abstract "This article proposes a memory cell, denoted by 1F-1T, consisting of a ferroelectric field-effect transistor (FeFET) cascaded with another current-limiting transistor (T). The transistor reduces the impact of drain current ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex-math notation=LaTeX>$I_{d}$</tex-math></inline-formula> ) variations by limiting the on-state current in FeFET. The experimental data from our 28nm high-k-metal-gate (HKMG) based FeFET calibrates and simulates the memory arrays. The simulation indicates a significant improvement in bit-line (BL) current ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex-math notation=LaTeX>$I_{BL}$</tex-math></inline-formula> ) variation and the accuracy of vector-matrix multiplication of the 1F-1T memory array. The system-level in-memory computing simulation with 1F-1T synapses shows an inference accuracy of 97.6% for the MNIST hand-written digits with multi-layer perceptron (MLP) neural networks." @default.
• W4384304074 created "2023-07-15" @default.
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• W4384304074 date "2023-01-01" @default.
• W4384304074 modified "2023-10-17" @default.
• W4384304074 title "1F-1T Array: Current Limiting Transistor Cascoded FeFET Memory Array for Variation Tolerant Vector-Matrix Multiplication Operation" @default.
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• W4384304074 doi "https://doi.org/10.1109/tnano.2023.3295093" @default.
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